1.
Adv Mater
; 27(41): 6519-25, 2015 Nov 04.
Artigo
em Inglês
| MEDLINE
| ID: mdl-26398725
RESUMO
The conduction channel of a graphene field-effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self-aligned gate-terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.